-~~+ 14.5 0.25 10.3 0.2 4.0 0.2 0.75 0.1 1.5 0.15 3.6 0.15 2.5 0.2 0.5 0.1 features rating to 1000v prv s u r g e o v e r l o ad r a t i ng t o 50 a m p e r es p e ak ideal for printed circuit board reliable low cost construction utilizing molded plastic technique results in inexpensive product 94v-o maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. s i n g le p h a s e , h alf w a v e , 60 h z , r e s i s t i v e or in d u c t i v e l o ad. f o r c ap a c i t i v e lo a d , de r a t e by 2 0 %. u n i t s maximum recurrent peak reverse voltage v r r m 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v ma x imu m rms v o lta g e v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v ma x imu m a v e r ag e f o r w ar d output current @t a = 2 5 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load ma x imu m in s t a nt a ne ou s f o r w a r d v o lt ag e @ 0.5 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a = 1 25 ma operating junction temperature range t j storage temperature range t stg 70 v o l t a g e r a n g e : 5 0 -- - 1 0 0 0 v c u rren t : 1 . 0 a 35 5 0 gbp plastic material has ul flammability classification glass passivated junction - 5 5 ---- + 1 50 - 5 5 ---- + 1 50 i r gbp1005 - - - gbp110 a 1 0 . 0 lead solderable per mil-std-202 method 208 i f ( av) 1. 0 silicon bridge rectifiers a 100 1005 101 102 104 106 108 110 50 100 1 . 05 1.0 50 i fsm gbp gbp gbp gbp gbp gbp gbp dimensions in millimeters weight: 0.05 ounces,1.52 grams diode semiconductor korea www.diode.kr
0 1 10 20 40 30 50 70 60 80 20 t j =125 ?? 8.3ms single half sine-wave 24 1 0 81 0 0 40 60 80 0.4 0.6 0.8 1.0 1.4 1.2 0.25 0.5 0.75 t j =125 pulse width =300 u s 0.2 0 . 0 1 1 . 0 10 0 4 0 60 0 . 1 20 t j =100 100 120 140 80 t j =25 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 copperpads (5.5mm x 5.5mm) 140 1.0 pcb 9.5mm resislive or inductive load 150 amperse s average forward output current , amperse s amperse s micro amperse s f i g . 3 - - t y p i cal f o r w ard cha r ac t e r i s t i c s f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i c s pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% gbp1005 - - - gbp110 number of cycles at 60h z ambient temperature, instantaneous reverse current, instantaneous forward voltage, volts fi g. 1 -- peak forward surge current f i g . 2 - - f o r w ard d e ra t i n g cur v e vvnvv output recti fi ed current instantaneous forward current, peak forward surge current, www.diode.kr diode semiconductor korea
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